Title :
Impact of Source/Drain Si1-yCy Stressors on the Strained Si NMOSFETs
Author :
Huang, Jacky ; Chang, S.T.
Keywords :
Capacitive sensors; Difference equations; Electron mobility; Etching; Lattices; MOSFETs; Poisson equations; Shape; Silicon carbide; Tensile stress;
Conference_Titel :
Semiconductor Device Research Symposium, 2005 International
Print_ISBN :
1-4244-0083-X
DOI :
10.1109/ISDRS.2005.1596001
