• DocumentCode
    3283193
  • Title

    Impact of Epitaxial NiSi/sub 2/ Source/Drain on Short Channel Effect and Line Edge Roughness in Extremely Scaled MOSFETs

  • Author

    Migita, S. ; Mise, N. ; Watanabe, Y. ; Kadoshima, M. ; Fujiwara, H. ; Ohno, M. ; Takaba, H. ; Iwamoto, K. ; Ogawa, A. ; Nabatame, T. ; Satake, H. ; Toriumi, A.

  • Author_Institution
    MIRAI-AIST, Tsukuba
  • fYear
    2005
  • fDate
    7-9 Dec. 2005
  • Firstpage
    111
  • Lastpage
    112
  • Abstract
    The impact of epitaxial NiSi2 S/D on MOSFET performance has been investigated. Atomically flat NiSi2/Si (111)-facet interface and straight S/D edges irrespective of the gate edge roughness contribute to suppressing SCE
  • Keywords
    MOSFET; nickel compounds; silicon; surface roughness; MOSFET performance; NiSi2-Si; epitaxial nickel silicide source/drain; gate edge roughness; line edge roughness; short channel effect; Annealing; Atomic layer deposition; FETs; High K dielectric materials; High-K gate dielectrics; Impurities; MOS devices; MOSFETs; Schottky barriers; Temperature;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Semiconductor Device Research Symposium, 2005 International
  • Conference_Location
    Bethesda, MD
  • Print_ISBN
    1-4244-0083-X
  • Type

    conf

  • DOI
    10.1109/ISDRS.2005.1596003
  • Filename
    1596003
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=3283193