DocumentCode :
3283203
Title :
Improved Electrical Characteristics and Retention Time of DRAMs Using HSG-merged-AHO Cylinder Capacitor
Author :
Kim, S.G. ; Hyun, C.S. ; Park, D. ; Kim, S.J. ; Cho, T.H. ; Kang, H.J. ; Lee, S.-H. ; Suk, J.G. ; Lim, B.K. ; Jeon, Y.S. ; Hwang, K.H. ; Hong, H.S. ; Jeon, S.G. ; Lee, K.Y. ; Oh, K.S. ; Park, D.G.
Author_Institution :
Device Res. Team, Samsung Electron. Co., Yongin
fYear :
2005
fDate :
7-9 Dec. 2005
Firstpage :
113
Lastpage :
114
Abstract :
Fully integrated 512Mb DRAMs using HSG-merged-AHO cylinder capacitor were successfully developed for the first time. Improved electrical characteristics and retention time of HSG-merged-AHO capacitor DRAM was achieved without any capacitor-related leakage current failure in 110nm technology. This technology is expected to be extended to sub-100nm technology
Keywords :
DRAM chips; aluminium compounds; capacitors; electric properties; hafnium compounds; 512 Mbit; Al2O3-HfO2; DRAM; HSG-merged-AHO cylinder capacitor; electrical characteristics; retention time; Aluminum oxide; Capacitance; Capacitors; Electric variables; Electrodes; Leakage current; Random access memory; Scanning electron microscopy; Silicon; Tin;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Semiconductor Device Research Symposium, 2005 International
Conference_Location :
Bethesda, MD
Print_ISBN :
1-4244-0083-X
Type :
conf
DOI :
10.1109/ISDRS.2005.1596004
Filename :
1596004
Link To Document :
https://search.ricest.ac.ir/dl/search/defaultta.aspx?DTC=49&DC=3283203
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