Title :
Fabrication of sol-gel-derived zinc oxide thin-film transistor
Author :
Shieh, Shao-Hui ; You, Hsin-Chiang ; Shao, Chyi-Yau
Author_Institution :
Dept. of Electron. Eng., Nat. Chin-Yi Univ. of Technol., Taichung, Taiwan
Abstract :
In this paper, a zinc oxide (ZnO) thin-film transistor (TFT) has been developed by using the sol-gel method with spin coating. Solution-processed thin-film deposition method is used to overcome the drawback of other vacuum deposition techniques in which process needs high temperature coating and expensive equipment. In order to analyze the characteristics of ZnO film, atomic force microscopy (AFM) is used to investigate the roughness of ZnO film. The experimental results show that the thickness of ZnO film is ranging from 5 nm to 10 nm with mean roughness 0.683 nm. The I-V characteristic of ZnO thin film transistor shows high current on-to-off ratio up to 106.
Keywords :
sol-gel processing; spin coating; thin film transistors; zinc compounds; AFM; TFT; ZnO; ZnO film roughness; atomic force microscopy; high temperature coating; sol-gel method; solution-processed thin-film deposition; spin coating; thin-film transistor; vacuum deposition; zinc oxide; Annealing; Fabrication; Films; Logic gates; Silicon; Thin film transistors; Zinc oxide; II–VI semiconductors; semiconductor growth; sol-gel processing; thin film transistors; zinc compounds;
Conference_Titel :
Nano/Micro Engineered and Molecular Systems (NEMS), 2011 IEEE International Conference on
Conference_Location :
Kaohsiung
Print_ISBN :
978-1-61284-775-7
DOI :
10.1109/NEMS.2011.6017459
