Title :
Electrical Characteristic Enhancement of HfTaSiON-Gated Metal-Oxide-Semiconductor Devices Using HfON Buffer Layer
Author :
Cheng, Chin-Lung ; Chang-Liao, Kuei-Shu ; Chang, Hsin-Chun ; Wang, Tien-Ko
Keywords :
Buffer layers; Dielectric devices; Electric variables; Hafnium oxide; Hysteresis; Interface states; Leakage current; MOS devices; Systems engineering and theory; Voltage;
Conference_Titel :
Semiconductor Device Research Symposium, 2005 International
Print_ISBN :
1-4244-0083-X
DOI :
10.1109/ISDRS.2005.1596005
