New Dielectrics for Gate Oxides and Surface Passivation on GaN

Author

Gila, B.P. ; Thaler, G.T. ; Onstine, A.H. ; Hlad, M. ; Gerger, A. ; Herrero, A. ; Allums, K.K. ; Stodilka, D. ; Jang, S. ; Kang, B. ; Anderson, T. ; Abernathy, C.R. ; Ren, F. ; Pearton, S.J.

Author_Institution

Dept. of Mater. Sci. & Eng., Florida Univ., Gainesville, FL

fYear

2005

fDate

7-9 Dec. 2005

Firstpage

130

Lastpage

131

Abstract

In this paper, the authors report the nitride surface preparation and growth of these crystalline oxide dielectrics, efforts to improve the oxide/nitride interface properties by reducing the lattice mismatch and accelerated aging effects for these dielectrics on the nitride semiconductors. The authors review progress in obtaining low interface state densities and reducing current collapse with these dielectrics on GaN and examine the thermal stability and compatibility with processing schemes for HEMTs

Keywords

III-V semiconductors; dielectric materials; gallium compounds; high electron mobility transistors; passivation; surface treatment; thermal stability; GaN; crystalline oxide dielectrics; gate oxides; low interface state densities; nitride semiconductors; nitride surface growth; nitride surface preparation; surface passivation; Accelerated aging; Crystallization; Dielectrics; Gallium nitride; HEMTs; Interface states; Lattices; MODFETs; Passivation; Thermal stability;

fLanguage

English

Publisher

ieee

Conference_Titel

Semiconductor Device Research Symposium, 2005 International

Conference_Location

Bethesda, MD

Print_ISBN

1-4244-0083-X

Type

conf

DOI

10.1109/ISDRS.2005.1596014

Filename

1596014