• DocumentCode
    3283412
  • Title

    Structural and Analytical Studies of 4H Silicon Carbide MOSFETs with Thermally Grown Oxides

  • Author

    Zheleva, Tsvetanka ; Levin, Igor ; Habersat, Dan ; Lelis, Aivars ; Dautrich, Morgen ; Lenahan, Patrick

  • fYear
    2005
  • fDate
    Dec. 7-9, 2005
  • Firstpage
    139
  • Lastpage
    140
  • Keywords
    Chemicals; Electrons; Laboratories; MOSFETs; Materials science and technology; Milling machines; NIST; Powders; Silicon carbide; Spectroscopy;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Semiconductor Device Research Symposium, 2005 International
  • Print_ISBN
    1-4244-0083-X
  • Type

    conf

  • DOI
    10.1109/ISDRS.2005.1596019
  • Filename
    1596019
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=3283412