DocumentCode
3283430
Title
Impact of Surface Steps on the Roughness Mobility in 4H-SiC
Author
Pennington, Gary ; Potbhare, Siddharth ; Goldsman, Neil ; McGarrity, James M. ; Lelis, Aivars
Author_Institution
Dept. of Electr. & Comput. Eng., Maryland Univ., College Park, MD
fYear
2005
fDate
7-9 Dec. 2005
Firstpage
143
Lastpage
144
Abstract
In this work, the step distributions are used to generate surface morphologies via Monte Carlo methods. Steps propagate along the [112macr0] direction. In addition to the stepped surface, a random surface roughness is added along both the [112macr0] (perpendicular to steps) and [11macr00] (parallel to steps) directions. The rms height Delta=0.38nm and correlation length L=2.2nm of the random contribution correspond to typical values in Si scaled to account for the unit cell dimensions of SiC
Keywords
Monte Carlo methods; silicon compounds; surface morphology; surface roughness; wide band gap semiconductors; 0.38 nm; 2.2 nm; Monte Carlo methods; SiC; roughness mobility; surface morphologies; surface roughness; surface steps; Anisotropic magnetoresistance; Degradation; Ion implantation; Military computing; Power engineering computing; Rough surfaces; Silicon carbide; Surface morphology; Surface roughness; Temperature;
fLanguage
English
Publisher
ieee
Conference_Titel
Semiconductor Device Research Symposium, 2005 International
Conference_Location
Bethesda, MD
Print_ISBN
1-4244-0083-X
Type
conf
DOI
10.1109/ISDRS.2005.1596021
Filename
1596021
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