DocumentCode
3283456
Title
Ultra-low-power HEMT and HBT devices and circuit demonstrations
Author
Lange, M.D. ; Cavus, A. ; Tsai, R.S. ; Monier, C. ; Deal, W.R. ; Chan, B. ; Cox, A.C. ; Pascua, D.G. ; Sandhu, R.S. ; Hsing, R. ; Poust, B.D. ; Kraus, J.L. ; Nam, P.S. ; Lee, L.J. ; Li, D. ; Gutierrez-Aitken, A.L. ; Noori, A.M. ; Hayashi, S.L. ; Goorsky,
Author_Institution
Northrop Grumman Space Technol., Redondo Beach, CA
fYear
2005
fDate
7-9 Dec. 2005
Firstpage
145
Lastpage
146
Abstract
During the past four years, the Defense Advanced Research Project Agency (DARPA) through its antimonide-based compound semiconductor (ABCS) program has sponsored development of high-electron-mobility transistor (HEMT) and heterojunction bipolar transistor (HBT) devices and circuits based on narrow-band-gap materials such as InAs or Inx Ga1-xAs with high In composition (x). These development efforts have sought to exploit the very high electron mobility and peak electron velocity of InAs for high speed circuit applications requiring very low power dissipation. At Northrop Grumman Space Technology (NGST), InAs/AlSb HEMT and In0.86Ga0.14As/In0.86Al0.14 As HBT devices have successfully been developed, and ultra-low-power circuits have successfully been demonstrated for both of these device technologies
Keywords
III-V semiconductors; aluminium compounds; gallium arsenide; heterojunction bipolar transistors; indium compounds; narrow band gap semiconductors; power HEMT; power bipolar transistors; In0.86Ga0.14As-In0.86Al0.14 As; InAs-AlSb; heterojunction bipolar transistor; high speed circuit; high-electron-mobility transistor; narrow-band-gap materials; peak electron velocity; power dissipation; ultra-low-power HBT devices; ultra-low-power HEMT devices; ultra-low-power circuits; Circuits; Electron mobility; HEMTs; Heterojunction bipolar transistors; MMICs; Molecular beam epitaxial growth; Noise figure; Power dissipation; Semiconductor materials; Space technology;
fLanguage
English
Publisher
ieee
Conference_Titel
Semiconductor Device Research Symposium, 2005 International
Conference_Location
Bethesda, MD
Print_ISBN
1-4244-0083-X
Type
conf
DOI
10.1109/ISDRS.2005.1596022
Filename
1596022
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