• DocumentCode
    3283468
  • Title

    High Quality Epitaxially-grown InAs on GaP Substrates

  • Author

    Yulius, Aristo ; Woodall, Jerry M.

  • fYear
    2005
  • fDate
    Dec. 7-9, 2005
  • Firstpage
    147
  • Lastpage
    147
  • Keywords
    Electron mobility; Large scale integration; Ohmic contacts; Photonic band gap; Rough surfaces; Silicon; Substrates; Surface morphology; Surface roughness; Wide band gap semiconductors;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Semiconductor Device Research Symposium, 2005 International
  • Print_ISBN
    1-4244-0083-X
  • Type

    conf

  • DOI
    10.1109/ISDRS.2005.1596023
  • Filename
    1596023
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=3283468