DocumentCode :
3283468
Title :
High Quality Epitaxially-grown InAs on GaP Substrates
Author :
Yulius, Aristo ; Woodall, Jerry M.
fYear :
2005
fDate :
Dec. 7-9, 2005
Firstpage :
147
Lastpage :
147
Keywords :
Electron mobility; Large scale integration; Ohmic contacts; Photonic band gap; Rough surfaces; Silicon; Substrates; Surface morphology; Surface roughness; Wide band gap semiconductors;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Semiconductor Device Research Symposium, 2005 International
Print_ISBN :
1-4244-0083-X
Type :
conf
DOI :
10.1109/ISDRS.2005.1596023
Filename :
1596023
Link To Document :
https://search.ricest.ac.ir/dl/search/defaultta.aspx?DTC=49&DC=3283468
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