DocumentCode :
3283499
Title :
High Mobility Strained Ge MOSFETs with high-k gate dielectric on Si
Author :
Donnelly, Joseph P. ; Kelly, David Q. ; Joshi, Sachin ; Dey, Sagnik ; Shahrjerdi, Davood ; Wiedeman, Issac ; Ahmad, Doreen ; Banerjee, Sanjay K.
fYear :
2005
fDate :
Dec. 7-9, 2005
Firstpage :
150
Lastpage :
150
Keywords :
Buffer layers; Chemical vapor deposition; Dielectric substrates; Germanium; Lead compounds; MOSFETs; Photonic band gap; Semiconductor films; Temperature; Thermal conductivity;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Semiconductor Device Research Symposium, 2005 International
Print_ISBN :
1-4244-0083-X
Type :
conf
DOI :
10.1109/ISDRS.2005.1596025
Filename :
1596025
Link To Document :
https://search.ricest.ac.ir/dl/search/defaultta.aspx?DTC=49&DC=3283499
