• DocumentCode
    3283560
  • Title

    Transient analysis of single interconnects characterized with measured S-parameter data

  • Author

    Dai, W.W.-M.

  • fYear
    1996
  • fDate
    28-30 Oct 1996
  • Firstpage
    159
  • Lastpage
    161
  • Abstract
    The correct modeling of the transmission lines requires accurate modeling of both the frequency-dependent conductor (skin effect) and the dielectric losses. The measured S-parameter data can easily capture the behavior of these losses. The discontinuities in interconnects are difficult to describe with closed form equations. They are better characterized with the measured S-parameter data. The integration of interconnects characterized with measured S-parameter into the scattering-parameter (S-parameter) macro-model based simulator has been proposed
  • Keywords
    S-parameters; dielectric losses; integrated circuit interconnections; skin effect; transient analysis; transmission line theory; S-parameter measurement; dielectric loss; discontinuity; frequency-dependent conductor; macro-model; simulator; single interconnect; skin effect; transient analysis; transmission line;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Electrical Performance of Electronic Packaging, 1996., IEEE 5th Topical Meeting
  • Conference_Location
    Napa, CA
  • Print_ISBN
    0-7803-3514-7
  • Type

    conf

  • DOI
    10.1109/EPEP.1996.564817
  • Filename
    564817