DocumentCode :
3283560
Title :
Transient analysis of single interconnects characterized with measured S-parameter data
Author :
Dai, W.W.-M.
fYear :
1996
fDate :
28-30 Oct 1996
Firstpage :
159
Lastpage :
161
Abstract :
The correct modeling of the transmission lines requires accurate modeling of both the frequency-dependent conductor (skin effect) and the dielectric losses. The measured S-parameter data can easily capture the behavior of these losses. The discontinuities in interconnects are difficult to describe with closed form equations. They are better characterized with the measured S-parameter data. The integration of interconnects characterized with measured S-parameter into the scattering-parameter (S-parameter) macro-model based simulator has been proposed
Keywords :
S-parameters; dielectric losses; integrated circuit interconnections; skin effect; transient analysis; transmission line theory; S-parameter measurement; dielectric loss; discontinuity; frequency-dependent conductor; macro-model; simulator; single interconnect; skin effect; transient analysis; transmission line;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Electrical Performance of Electronic Packaging, 1996., IEEE 5th Topical Meeting
Conference_Location :
Napa, CA
Print_ISBN :
0-7803-3514-7
Type :
conf
DOI :
10.1109/EPEP.1996.564817
Filename :
564817
Link To Document :
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