DocumentCode
3283571
Title
A New Negative-Differential-Resistance Effect in 350 GHz SiGe HBTs Operating at Cryogenic Temperatures
Author
Liang, Q. ; Krithivasan, R. ; Ahmed, A. ; Lu, Y. ; Li, Y. ; Cressler, J.D. ; Niu, G. ; Rieh, J.-S. ; Freeman, G. ; Ahlgren, D. ; Joseph, A.
fYear
2005
fDate
Dec. 7-9, 2005
Firstpage
159
Lastpage
160
Keywords
Character generation; Circuits; Cryogenics; Electrical capacitance tomography; Germanium silicon alloys; Heterojunction bipolar transistors; Hysteresis; Silicon germanium; Temperature; Voltage;
fLanguage
English
Publisher
ieee
Conference_Titel
Semiconductor Device Research Symposium, 2005 International
Print_ISBN
1-4244-0083-X
Type
conf
DOI
10.1109/ISDRS.2005.1596030
Filename
1596030
Link To Document