DocumentCode :
3283571
Title :
A New Negative-Differential-Resistance Effect in 350 GHz SiGe HBTs Operating at Cryogenic Temperatures
Author :
Liang, Q. ; Krithivasan, R. ; Ahmed, A. ; Lu, Y. ; Li, Y. ; Cressler, J.D. ; Niu, G. ; Rieh, J.-S. ; Freeman, G. ; Ahlgren, D. ; Joseph, A.
fYear :
2005
fDate :
Dec. 7-9, 2005
Firstpage :
159
Lastpage :
160
Keywords :
Character generation; Circuits; Cryogenics; Electrical capacitance tomography; Germanium silicon alloys; Heterojunction bipolar transistors; Hysteresis; Silicon germanium; Temperature; Voltage;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Semiconductor Device Research Symposium, 2005 International
Print_ISBN :
1-4244-0083-X
Type :
conf
DOI :
10.1109/ISDRS.2005.1596030
Filename :
1596030
Link To Document :
https://search.ricest.ac.ir/dl/search/defaultta.aspx?DTC=49&DC=3283571
