DocumentCode

3283581

Title

High-Voltage SiC and GaN Devices for Power Electronics Applications

Author

Chow, T. Paul

fYear

2005

fDate

Dec. 7-9, 2005

Firstpage

161

Lastpage

161

Keywords

Commercialization; Gallium nitride; Materials reliability; Power electronics; Rectifiers; Silicon carbide; Thyristors;

fLanguage

English

Publisher

ieee

Conference_Titel

Semiconductor Device Research Symposium, 2005 International

Print_ISBN

1-4244-0083-X

Type

conf

DOI

10.1109/ISDRS.2005.1596031

Filename

1596031