High Temperature Characterization of SiC BJTs for Power Switching Applications

Author

Sheng, K. ; Yu, L.C. ; Zhang, J. ; Zhao, J.H.

Author_Institution

Dept. of Electr. & Comput. Eng., Rutgers Univ., New Brunswick, NJ

fYear

2005

fDate

7-9 Dec. 2005

Firstpage

168

Lastpage

169

Abstract

In this paper, SiC BJTs with a blocking voltage of 1836V are characterized in power switching applications for temperatures up to 275degC. Inductive switching speeds under different load current and DC bus voltage conditions are also studied. This is the first time a SiC switch has been fully characterized at a practically useful power level (300V, 7A) and a temperature substantially higher than any commercial power device is capable of. The reported results provide a comprehensive guide for high frequency switching of SiC BJTs in a practical power switching circuit

Keywords

bipolar transistor switches; high-temperature electronics; power bipolar transistors; power semiconductor switches; silicon compounds; wide band gap semiconductors; 1836 V; 300 V; 7 A; BJT; DC bus voltage conditions; SiC; bipolar junction transistor; inductive switching speeds; load current; power switching applications; Circuit testing; Frequency; Power semiconductor switches; Semiconductor materials; Silicon carbide; Switching circuits; Switching loss; Temperature dependence; Temperature distribution; Voltage;

fLanguage

English

Publisher

ieee

Conference_Titel

Semiconductor Device Research Symposium, 2005 International

Conference_Location

Bethesda, MD

Print_ISBN

1-4244-0083-X

Type

conf

DOI

10.1109/ISDRS.2005.1596035

Filename

1596035