A packaged 106–110 GHz bi-directional 10Gbps 0.11 pJ/bit/cm CMOS transceiver

Author

Weissman, Nir ; Jameson, Samuel ; Socher, Eran

Author_Institution

Sch. of Electr. Eng., Tel-Aviv Univ., Tel-Aviv, Israel

fYear

2015

fDate

17-22 May 2015

Firstpage

1

Lastpage

4

Abstract

A non-coherent amplitude shift keying (ASK) W-band packaged transceiver in 65 nm CMOS technology is presented. The transceiver architecture is based on an innovative bi-directional topology with a maximum data rate of 10 Gbps limited by the measurement equipment. An output power of -2.3 dBm at 107 GHz and 10 Gbps modulated signal is measured on-chip in the transmit mode. In the receive mode a BER<;10^-12 was achieved with data rates up to 8.5Gbps. The packaged transceiver demonstrates 10Gbps wireline and wireless bi-directional half-duplex communication with only 34 mW of DC power consumption. The design occupies only 0.35 mm² including pads.

Keywords

CMOS integrated circuits; amplitude shift keying; field effect MIMIC; modulators; radio transceivers; ASK; CMOS transceiver; W-band packaged transceiver; bit rate 10 Gbit/s; frequency 106 GHz to 110 GHz; noncoherent amplitude shift keying; packaged bidirectional transceiver; power 34 mW; size 65 nm; wireless bidirectional half-duplex communication; wireline bidirectional half-duplex communication; Amplitude shift keying; CMOS integrated circuits; CMOS technology; Frequency modulation; Parasitic capacitance; Transceivers; Wireless communication; 65nm CMOS; mm-wave; transceiver;

fLanguage

English

Publisher

ieee

Conference_Titel

Microwave Symposium (IMS), 2015 IEEE MTT-S International

Conference_Location

Phoenix, AZ

Type

conf

DOI

10.1109/MWSYM.2015.7166752

Filename

7166752