DocumentCode :
3283711
Title :
History and state-of-the-art in large signal modeling for RF/microwave power amplifier development
Author :
Golio, M. ; Dunleavy, L. ; Gneiting, T.
Author_Institution :
Golio Endeavors, Mesa, AZ, USA
fYear :
2015
fDate :
17-22 May 2015
Firstpage :
1
Lastpage :
4
Abstract :
An up-to-date summary of relevant large signal (LS) or nonlinear models for power amplifier design is provided, covering a wide range of device types, along with a brief history for the various categories of models. Addressed are compact LS models for III-V as well as silicon FETs and bipolar transistors that are suitable for power amplifier design, utilizing a range of technologies including GaN, GaAs, SiGe and CMOS. Behavioral LS models are considered along with trade-offs that often exist as compared to compact models. Important developments of related technologies that have had significant impact on large signal modeling such as automated small and large signal network analyzers, wafer probe capability, and harmonic balance simulator software are also discussed.
Keywords :
CMOS integrated circuits; Ge-Si alloys; III-V semiconductors; bipolar transistors; elemental semiconductors; field effect MMIC; field effect transistors; gallium arsenide; gallium compounds; microwave power amplifiers; network analysers; silicon; wide band gap semiconductors; CMOS integrated circuit; GaAs; GaN; III-V FET; RF-microwave power amplifier development; Si; SiGe; bipolar transistors; compact LS models; harmonic balance simulator software; large signal modeling; network analyzers; nonlinear models; silicon FET; wafer probe capability; Analytical models; Computational modeling; HEMTs; MODFETs; Power measurement; Radio frequency; Semiconductor device modeling;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Microwave Symposium (IMS), 2015 IEEE MTT-S International
Conference_Location :
Phoenix, AZ
Type :
conf
DOI :
10.1109/MWSYM.2015.7166756
Filename :
7166756
Link To Document :
بازگشت