DocumentCode
3283711
Title
History and state-of-the-art in large signal modeling for RF/microwave power amplifier development
Author
Golio, M. ; Dunleavy, L. ; Gneiting, T.
Author_Institution
Golio Endeavors, Mesa, AZ, USA
fYear
2015
fDate
17-22 May 2015
Firstpage
1
Lastpage
4
Abstract
An up-to-date summary of relevant large signal (LS) or nonlinear models for power amplifier design is provided, covering a wide range of device types, along with a brief history for the various categories of models. Addressed are compact LS models for III-V as well as silicon FETs and bipolar transistors that are suitable for power amplifier design, utilizing a range of technologies including GaN, GaAs, SiGe and CMOS. Behavioral LS models are considered along with trade-offs that often exist as compared to compact models. Important developments of related technologies that have had significant impact on large signal modeling such as automated small and large signal network analyzers, wafer probe capability, and harmonic balance simulator software are also discussed.
Keywords
CMOS integrated circuits; Ge-Si alloys; III-V semiconductors; bipolar transistors; elemental semiconductors; field effect MMIC; field effect transistors; gallium arsenide; gallium compounds; microwave power amplifiers; network analysers; silicon; wide band gap semiconductors; CMOS integrated circuit; GaAs; GaN; III-V FET; RF-microwave power amplifier development; Si; SiGe; bipolar transistors; compact LS models; harmonic balance simulator software; large signal modeling; network analyzers; nonlinear models; silicon FET; wafer probe capability; Analytical models; Computational modeling; HEMTs; MODFETs; Power measurement; Radio frequency; Semiconductor device modeling;
fLanguage
English
Publisher
ieee
Conference_Titel
Microwave Symposium (IMS), 2015 IEEE MTT-S International
Conference_Location
Phoenix, AZ
Type
conf
DOI
10.1109/MWSYM.2015.7166756
Filename
7166756
Link To Document