• DocumentCode
    3283732
  • Title

    An Ultrahigh Performance 8 GHz SiGe Power HBT

  • Author

    Wang, Guogong ; Yuan, Hao-Chih ; Ma, Zhenqiang

  • fYear
    2005
  • fDate
    7-9 Dec. 2005
  • Firstpage
    181
  • Lastpage
    182
  • Abstract
    A new record (FOM=3.8times105 mWmiddotGHz2 ) of power performance for SiGe power HBTs has been established in this study. By employing an extremely heavily doped base region, a record low sheet resistance of the pinch base is achieved, which offers a small base resistance and the feasibility of using wider emitter stripes. The reduction of base-collector capacitance and device size, due to the use of wider emitter stripes, dramatically improve the power gain and thus the power added efficiency
  • Keywords
    Ge-Si alloys; heterojunction bipolar transistors; microwave bipolar transistors; microwave power transistors; power bipolar transistors; 8 GHz; SiGe; base-collector capacitance; emitter stripes; heavily doped base region; low sheet resistance; microwave power HBT; Electrical resistance measurement; Fingers; Frequency; Germanium silicon alloys; Heterojunction bipolar transistors; Power amplifiers; Power generation; Proximity effect; Silicon germanium; Thermal degradation;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Semiconductor Device Research Symposium, 2005 International
  • Conference_Location
    Bethesda, MD
  • Print_ISBN
    1-4244-0083-X
  • Type

    conf

  • DOI
    10.1109/ISDRS.2005.1596042
  • Filename
    1596042
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=3283732