Title :
An Ultrahigh Performance 8 GHz SiGe Power HBT
Author :
Wang, Guogong ; Yuan, Hao-Chih ; Ma, Zhenqiang
Abstract :
A new record (FOM=3.8times105 mWmiddotGHz2 ) of power performance for SiGe power HBTs has been established in this study. By employing an extremely heavily doped base region, a record low sheet resistance of the pinch base is achieved, which offers a small base resistance and the feasibility of using wider emitter stripes. The reduction of base-collector capacitance and device size, due to the use of wider emitter stripes, dramatically improve the power gain and thus the power added efficiency
Keywords :
Ge-Si alloys; heterojunction bipolar transistors; microwave bipolar transistors; microwave power transistors; power bipolar transistors; 8 GHz; SiGe; base-collector capacitance; emitter stripes; heavily doped base region; low sheet resistance; microwave power HBT; Electrical resistance measurement; Fingers; Frequency; Germanium silicon alloys; Heterojunction bipolar transistors; Power amplifiers; Power generation; Proximity effect; Silicon germanium; Thermal degradation;
Conference_Titel :
Semiconductor Device Research Symposium, 2005 International
Conference_Location :
Bethesda, MD
Print_ISBN :
1-4244-0083-X
DOI :
10.1109/ISDRS.2005.1596042
