DocumentCode :
3283760
Title :
Strained-Si NMOSFETs on thin 200 nm virtual substrates
Author :
Hellström, Per-Erik ; Edholm, Jonas ; Östling, Mikael ; Olsen, Sarah ; O´Neill, Anthony ; Lyutovich, Klara ; Oehme, Michael ; Kasper, Erich
fYear :
2005
fDate :
Dec. 7-9, 2005
Firstpage :
185
Lastpage :
186
Keywords :
Buffer layers; Capacitive sensors; Germanium silicon alloys; Information technology; MOSFET circuits; Microelectronics; Molecular beam epitaxial growth; Silicon germanium; Substrates; Temperature;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Semiconductor Device Research Symposium, 2005 International
Print_ISBN :
1-4244-0083-X
Type :
conf
DOI :
10.1109/ISDRS.2005.1596044
Filename :
1596044
Link To Document :
https://search.ricest.ac.ir/dl/search/defaultta.aspx?DTC=49&DC=3283760
