DocumentCode :
3283761
Title :
The characteristics of glass deep dry etching process with a single PR mask
Author :
Park, Tag Gyu ; Min, Junggi ; Han, Dong-Chul ; Oh, Yeongtaek ; Seo, Wonjin
Author_Institution :
Korea Bio-IT Foundry Seoul Center, Seoul Nat. Univ., Seoul, South Korea
fYear :
2011
fDate :
20-23 Feb. 2011
Firstpage :
885
Lastpage :
888
Abstract :
The processes of fabricating the etch mask for a glass dry etching are complicated and require high cost. To reduce these disadvantages, we suggest a novel glass dry etching method using a single photoresist mask. In this work, we figured out the optimized condition for the glass dry etching using a photoresist without any metal or silicon mask. We observed the characteristics of quartz wafer, such as the etch profile, etch rate, the selectivity and the critical dimension loss rate.
Keywords :
etching; glass; masks; photoresists; critical dimension loss rate; etch mask fabrication process; glass deep dry etching process; quartz wafer; single PR mask; single photoresist mask; Dry etching; Fabrication; Glass; Resists; Silicon; Substrates; Glass deep reactive ion etching; etch rate; phtoresist;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Nano/Micro Engineered and Molecular Systems (NEMS), 2011 IEEE International Conference on
Conference_Location :
Kaohsiung
Print_ISBN :
978-1-61284-775-7
Type :
conf
DOI :
10.1109/NEMS.2011.6017495
Filename :
6017495
Link To Document :
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