Title :
Calculation of the Electron Mobility in Silicon Inversion Layers: Dependence on Surface Orientation, Channel Direction, and Stress
Author :
Yang, I.-J. ; Peng, C.-Y. ; Chang, S.T. ; Liu, C.W.
Keywords :
Acoustic scattering; Compressive stress; Conductivity; Electron mobility; Light scattering; Optical scattering; Phonons; Semiconductor device modeling; Silicon; Tensile stress;
Conference_Titel :
Semiconductor Device Research Symposium, 2005 International
Print_ISBN :
1-4244-0083-X
DOI :
10.1109/ISDRS.2005.1596045
