DocumentCode
3283765
Title
Calculation of the Electron Mobility in Silicon Inversion Layers: Dependence on Surface Orientation, Channel Direction, and Stress
Author
Yang, I.-J. ; Peng, C.-Y. ; Chang, S.T. ; Liu, C.W.
fYear
2005
fDate
Dec. 7-9, 2005
Firstpage
187
Lastpage
188
Keywords
Acoustic scattering; Compressive stress; Conductivity; Electron mobility; Light scattering; Optical scattering; Phonons; Semiconductor device modeling; Silicon; Tensile stress;
fLanguage
English
Publisher
ieee
Conference_Titel
Semiconductor Device Research Symposium, 2005 International
Print_ISBN
1-4244-0083-X
Type
conf
DOI
10.1109/ISDRS.2005.1596045
Filename
1596045
Link To Document