UV SiC avalanche photodetectors for photon counting

Author

Soloviev, Stanislav ; Vert, Alexey ; Bolotnikov, Alexander ; Sandvik, Peter

Author_Institution

Gen. Electr. Global Res. Center, Micro & Nanostruct. Technol., Niskayuna, NY, USA

fYear

2009

fDate

25-28 Oct. 2009

Firstpage

1897

Lastpage

1900

Abstract

At present, the best detector for photon-counting in the deep UV region of the spectrum is based on photoemissive detectors such as PMTs. However, its disadvantages are low quantum efficiency, sensitivity to magnetic field and high cost. In this work we investigate semiconductor alternatives to PMTs for use for photon counting in the deep UV. Silicon Carbide avalanche photodetectors with separate absorption and multiplication regions were fabricated and characterized. Effect of thicknesses of the multiplication and absorption layers on electrical and optical characteristics were analyzed.

Keywords

avalanche photodiodes; photodetectors; photoemission; photon counting; silicon compounds; wide band gap semiconductors; PMT; SiC; absorption regions; avalanche photodetectors; electrical characteristics; multiplication regions; optical characteristics; photoemissive detectors; photon counting detector; Biomedical optical imaging; Costs; Dark current; Detectors; Electromagnetic wave absorption; Magnetic fields; Nanostructures; Photodetectors; Photonics; Silicon carbide;

fLanguage

English

Publisher

ieee

Conference_Titel

Sensors, 2009 IEEE

Conference_Location

Christchurch

ISSN

1930-0395

Print_ISBN

978-1-4244-4548-6

Electronic_ISBN

1930-0395

Type

conf

DOI

10.1109/ICSENS.2009.5398378

Filename

5398378