Title :
Emerging Reliability Issues of Nano-Scale SOI Technology
Author :
Ioannou, Dimitris P. ; Mishra, Rahul ; Ioannou, Dimitris E.
Author_Institution :
Dept. of Electr. & Comput. Eng., George Mason Univ., Fairfax, VA
Abstract :
In this review, the following reliability concerns: hot carrier reliability, negative-bias temperature instability (NBTI), time depended dielectric breakdown (TDDB) and electrostatic discharge, are discussed individually, and recognizing that the responsible mechanisms quite often are active simultaneously, their interdependence and interaction is also discussed
Keywords :
electric breakdown; electrostatic discharge; hot carriers; nanotechnology; reliability; silicon-on-insulator; electrostatic discharge; hot carrier reliability; nanoscale SOI technology; negative-bias temperature instability; silicon-on-insulator; time depended dielectric breakdown; CMOS technology; Circuits; Dielectrics; Electrostatic discharge; Hot carriers; MOSFETs; Power supplies; Silicon on insulator technology; Stress; Voltage;
Conference_Titel :
Semiconductor Device Research Symposium, 2005 International
Conference_Location :
Bethesda, MD
Print_ISBN :
1-4244-0083-X
DOI :
10.1109/ISDRS.2005.1596051
