An experimental study on the thermal stability of sputtered TiN gates for gate-first FinFETs

Author

Liu, Y.X. ; Sugimata, E. ; Matsukawa, T. ; Masahara, M. ; Endo, K. ; Ishii, K. ; Shimizu, T. ; Suzuki, E.

fYear

2005

fDate

Dec. 7-9, 2005

Firstpage

201

Lastpage

202

Keywords

Annealing; Capacitance-voltage characteristics; Doping; Fabrication; FinFETs; MOSFETs; Nitrogen; Thermal stability; Threshold voltage; Tin;

fLanguage

English

Publisher

ieee

Conference_Titel

Semiconductor Device Research Symposium, 2005 International

Print_ISBN

1-4244-0083-X

Type

DOI

10.1109/ISDRS.2005.1596052

Filename

1596052

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