DocumentCode
3283875
Title
Worst Case Stress Conditions for Hot Carrier Induced Degradation of p-Channel SOI MOSFETs
Author
Ioannou, D.P. ; Mishra, R. ; Ioannou, D.E. ; Liu, S.T. ; Flanery, M. ; Hughes, H.L.
fYear
2005
fDate
Dec. 7-9, 2005
Firstpage
203
Lastpage
204
Keywords
Computer aided software engineering; Degradation; Hot carriers; Human computer interaction; MOSFETs; Niobium compounds; Stress; Temperature; Titanium compounds; Voltage;
fLanguage
English
Publisher
ieee
Conference_Titel
Semiconductor Device Research Symposium, 2005 International
Print_ISBN
1-4244-0083-X
Type
conf
DOI
10.1109/ISDRS.2005.1596053
Filename
1596053
Link To Document