DocumentCode :
3283875
Title :
Worst Case Stress Conditions for Hot Carrier Induced Degradation of p-Channel SOI MOSFETs
Author :
Ioannou, D.P. ; Mishra, R. ; Ioannou, D.E. ; Liu, S.T. ; Flanery, M. ; Hughes, H.L.
fYear :
2005
fDate :
Dec. 7-9, 2005
Firstpage :
203
Lastpage :
204
Keywords :
Computer aided software engineering; Degradation; Hot carriers; Human computer interaction; MOSFETs; Niobium compounds; Stress; Temperature; Titanium compounds; Voltage;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Semiconductor Device Research Symposium, 2005 International
Print_ISBN :
1-4244-0083-X
Type :
conf
DOI :
10.1109/ISDRS.2005.1596053
Filename :
1596053
Link To Document :
https://search.ricest.ac.ir/dl/search/defaultta.aspx?DTC=49&DC=3283875
بازگشت