Title :
Design Guideline of Multi-Gate MOSFETs Considering Body Effect
Author :
Nagumo, Toshiharu ; Hiramoto, Toshiro
Keywords :
Capacitance; Design methodology; Electron beams; FinFETs; Guidelines; Leakage current; Lithography; MOSFETs; Shape; Silicon;
Conference_Titel :
Semiconductor Device Research Symposium, 2005 International
Print_ISBN :
1-4244-0083-X
DOI :
10.1109/ISDRS.2005.1596054
