N-type Thin-film Transistors Fabricated on Transferred, Elastically Strain-Shared Si/SiGe/Si Membranes

Strained silicon is known for both electron and hole mobility enhancement as stated in J. L. Hoyt et al. (2002) and C. W. Leitz et al. (2002). However, the dislocations could be detrimental to the device performance without carefully engineering the relaxation according to K. Ismail et al. (1994). To overcome these limitations, compliant substrate and Si/SiGe/Si sandwich structure that utilized elastic strain-sharing have been proposed according to Y. H. Luo et al. (2001) and G. M. Cohen et al. (2005). In this paper, we report N-type thin-film transistors (TFTs) fabricated on these dislocation-free, stain sharing Si/SiGe/Si membranes