Title :
Gate-dielectric interface effects on low-frequency (1/f) noise in p-MOSFETs with high-K dielectrics
Author :
Srinivasan, P. ; Simoen, E. ; Singanamalla, R. ; Yu, H.Y. ; Claeys, C. ; Misra, D.
Keywords :
CMOS technology; Dielectric materials; Electrodes; Frequency; Hafnium; High K dielectric materials; High-K gate dielectrics; Inorganic materials; Low-frequency noise; MOSFET circuits;
Conference_Titel :
Semiconductor Device Research Symposium, 2005 International
Print_ISBN :
1-4244-0083-X
DOI :
10.1109/ISDRS.2005.1596059
