Title :
The evolution of transistors for power amplifiers: 1947 to today
Author :
Niehenke, Edward C.
Author_Institution :
Niehenke Consulting, Baltimore, MD, USA
Abstract :
This paper traces the development of transistors for power amplifiers (PAs). Technological transistor innovations have raised output power levels, the frequency of operation and the efficiency of power amplifiers. Devices to be discussed include the bipolar junction transistor (BJT), heterojunction bipolar transistor (HBT), complimentary metal oxide semiconductor (CMOS), laterally diffused metal oxide semiconductor (LDMOS), metal-semiconductor field effect transistor (MESFET), high electron mobility transistor (HEMT), and pseudomorphic high electron transistor (PHEMT). Semiconductors for PAs include Silicon (Si), Gallium Arsenide (GaAs), Indium Phosphide (InP), and Gallium Nitride (GaN) and the various heterojunctions of these semiconductors.
Keywords :
CMOS integrated circuits; Schottky gate field effect transistors; heterojunction bipolar transistors; power amplifiers; CMOS; LDMOS; MESFET; PHEMT; bipolar junction transistor; complimentary metal oxide semiconductor; heterojunction bipolar transistor; laterally diffused metal oxide semiconductor; metal-semiconductor field effect transistor; power amplifiers; pseudomorphic high electron transistor; technological transistor innovations; CMOS integrated circuits; Gallium arsenide; Gallium nitride; Heterojunction bipolar transistors; MESFETs; Silicon; GaAs; GaN; Ge; InP; Power amplifier (PA); Si; bipolar junction transistor (BJT); complimentary metal oxide semiconductor (CMOS); high electron mobility transistor (HBT); laterally diffused metal oxide semiconductor (LDMOS); metal oxide semiconductor field effect transistor (MOSFET); metal-semiconductor field effect transistor (MESFET); pseudomorphic high electron transistor (PHEMT);
Conference_Titel :
Microwave Symposium (IMS), 2015 IEEE MTT-S International
Conference_Location :
Phoenix, AZ
DOI :
10.1109/MWSYM.2015.7166768
