Title :
A 100 W tri-band LDMOS integrated Doherty amplifier for LTE-advanced applications
Author :
Moronval, X. ; van der Zanden, J. ; Ercoli, M.
Author_Institution :
NXP Semicond., Toulouse, France
Abstract :
A Doherty amplifier architecture with integrated input splitter and output combiner, allowing bandwidth extension, is described. Based on this approach, a very compact 100W symmetrical LDMOS Doherty amplifier has been designed and characterized in the 1.805 to 2.17 GHz frequency band. It can achieve 15.9 dB maximum gain, 46 to 48 % back-off efficiency and can be linearized at -59.3 dBc ACPR level with a 10 MHz wide LTE signal. The fabricated amplifier is 50 × 50 mm2.
Keywords :
Long Term Evolution; power amplifiers; LTE-advanced applications; frequency 1.805 GHz to 2.17 GHz; integrated input splitter; output combiner; tri-band LDMOS integrated Doherty amplifier; Bandwidth; Gallium nitride; Impedance; Lead; Radio frequency; Doherty; High Efficiency; Power Amplifiers; Wideband Amplifiers;
Conference_Titel :
Microwave Symposium (IMS), 2015 IEEE MTT-S International
Conference_Location :
Phoenix, AZ
DOI :
10.1109/MWSYM.2015.7166771
