• DocumentCode
    3284072
  • Title

    Schottky Barrier Height in GaN/AlGaN Heterostructures

  • Author

    Anwar, A.F.M. ; Faraclas, Elias W. ; Smith, Kurt V.

  • Author_Institution
    Dept. of Electr. & Comput. Eng., Connecticut Univ., Storrs, CT
  • fYear
    2005
  • fDate
    7-9 Dec. 2005
  • Firstpage
    221
  • Lastpage
    222
  • Abstract
    We present a modified expression for PhiB that takes into account the effect of total polarization and the 2DEG concentration in GaN at the GaN/AlGaN heterointerface through the incorporation of Schottky barrier lowering
  • Keywords
    III-V semiconductors; Schottky barriers; aluminium compounds; gallium compounds; two-dimensional electron gas; wide band gap semiconductors; 2DEG concentration; GaN-AlGaN; Schottky barrier; polarization effect; Aluminum gallium nitride; Doping; Gallium nitride; HEMTs; Lattices; MODFETs; Permittivity; Piezoelectric polarization; Schottky barriers; Tensile strain;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Semiconductor Device Research Symposium, 2005 International
  • Conference_Location
    Bethesda, MD
  • Print_ISBN
    1-4244-0083-X
  • Type

    conf

  • DOI
    10.1109/ISDRS.2005.1596063
  • Filename
    1596063
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=3284072