DocumentCode :
3284072
Title :
Schottky Barrier Height in GaN/AlGaN Heterostructures
Author :
Anwar, A.F.M. ; Faraclas, Elias W. ; Smith, Kurt V.
Author_Institution :
Dept. of Electr. & Comput. Eng., Connecticut Univ., Storrs, CT
fYear :
2005
fDate :
7-9 Dec. 2005
Firstpage :
221
Lastpage :
222
Abstract :
We present a modified expression for PhiB that takes into account the effect of total polarization and the 2DEG concentration in GaN at the GaN/AlGaN heterointerface through the incorporation of Schottky barrier lowering
Keywords :
III-V semiconductors; Schottky barriers; aluminium compounds; gallium compounds; two-dimensional electron gas; wide band gap semiconductors; 2DEG concentration; GaN-AlGaN; Schottky barrier; polarization effect; Aluminum gallium nitride; Doping; Gallium nitride; HEMTs; Lattices; MODFETs; Permittivity; Piezoelectric polarization; Schottky barriers; Tensile strain;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Semiconductor Device Research Symposium, 2005 International
Conference_Location :
Bethesda, MD
Print_ISBN :
1-4244-0083-X
Type :
conf
DOI :
10.1109/ISDRS.2005.1596063
Filename :
1596063
Link To Document :
https://search.ricest.ac.ir/dl/search/defaultta.aspx?DTC=49&DC=3284072
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