Title :
Smart-Cut™ piezoresistive strain sensors for high temperature applications
Author :
Kuo, Hung-I ; Ko, Wen H.
Author_Institution :
Dept. of Electr. Eng. & Comput. Sci., Case Western Reserve Univ., Cleveland, OH, USA
Abstract :
This paper presents research results on novel high performance silicon piezoresistive strain sensors based on Smart-CutTM SOI wafer, with 340 nm silicon overlayer and 1 μm buried oxide. Experimental results show that the 3 kΩ Wheatstone bridged piezoresistive strain sensor has a sensitivity of 0.14 mV/με at 5V bias and a linearity of 0.9% full scale, in the range of ±1000 /με. When tested at elevated temperatures, the gauge factor of the sensor changed from 27.6 at 24 °C to 25.4 at 130 °C, equivalent to a temperature coefficient of the gauge factor of -0.02 /°C, which is an order of magnitude smaller than the -0.55 /°C value of previous sensors developed with 2??1018 cm-3 doping. This piezoresistive sensor is suitable for applications that need high temperature stability.
Keywords :
high-temperature techniques; piezoresistive devices; silicon-on-insulator; strain sensors; Smart-Cut SOI wafer; Smart-Cut piezoresistive strain sensors; Wheatstone bridged piezoresistive strain sensor; high temperature applications; high temperature stability; silicon piezoresistive strain sensors; size 340 nm; temperature 130 °C; temperature 24 °C; temperature coefficient; Biomembranes; Bovine; Cells (biology); Current measurement; Impedance measurement; Leak detection; Leakage current; Microsensors; Molecular biophysics; Proteins;
Conference_Titel :
Sensors, 2009 IEEE
Conference_Location :
Christchurch
Print_ISBN :
978-1-4244-4548-6
Electronic_ISBN :
1930-0395
DOI :
10.1109/ICSENS.2009.5398392
