DocumentCode :
3284198
Title :
Low Leakage Current Transport and High Breakdown Strength of HfO2/SiC MIS Device Structures
Author :
Hullavarad, S.S. ; Jones, E.B. ; Vispute, R.D. ; Venkatesan, T.
fYear :
2005
fDate :
Dec. 7-9, 2005
Firstpage :
238
Lastpage :
239
Keywords :
Dielectric constant; Dielectric materials; Electric breakdown; Hafnium oxide; High K dielectric materials; High-K gate dielectrics; Leakage current; MIS devices; Silicon carbide; Temperature;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Semiconductor Device Research Symposium, 2005 International
Print_ISBN :
1-4244-0083-X
Type :
conf
DOI :
10.1109/ISDRS.2005.1596072
Filename :
1596072
Link To Document :
https://search.ricest.ac.ir/dl/search/defaultta.aspx?DTC=49&DC=3284198
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