DocumentCode
3284223
Title
Dramatic Reduction of Gate Leakage Current of Ultrathin Oxides through Oxide Structure Modification
Author
Chen, Zhi ; Guo, Jun ; Samantaray, Chandan B.
fYear
2005
fDate
Dec. 7-9, 2005
Firstpage
240
Lastpage
241
Keywords
Annealing; Deuterium; Hafnium oxide; High K dielectric materials; High-K gate dielectrics; Hydrogen; Infrared spectra; Leakage current; Phonons; Tunneling;
fLanguage
English
Publisher
ieee
Conference_Titel
Semiconductor Device Research Symposium, 2005 International
Print_ISBN
1-4244-0083-X
Type
conf
DOI
10.1109/ISDRS.2005.1596073
Filename
1596073
Link To Document