Title :
Dramatic Reduction of Gate Leakage Current of Ultrathin Oxides through Oxide Structure Modification
Author :
Chen, Zhi ; Guo, Jun ; Samantaray, Chandan B.
Keywords :
Annealing; Deuterium; Hafnium oxide; High K dielectric materials; High-K gate dielectrics; Hydrogen; Infrared spectra; Leakage current; Phonons; Tunneling;
Conference_Titel :
Semiconductor Device Research Symposium, 2005 International
Print_ISBN :
1-4244-0083-X
DOI :
10.1109/ISDRS.2005.1596073
