مرکز منطقه ای اطلاع رساني علوم و فناوري - A New Gate Dielectric HfLaO with Metal Gate Work Function Tuning Capability and Superior NMOSFETs Performance

DocumentCode :

3284229

Title :

A New Gate Dielectric HfLaO with Metal Gate Work Function Tuning Capability and Superior NMOSFETs Performance

Author :

Wang, X.P. ; Li, M.-F. ; Chin, Albert ; Zhu, C. ; Chi, Ren ; Yu, X.F. ; Shen, C. ; Du, A.Y. ; Chan, D.S.H. ; Kwong, Dim-Lee

fYear :

2005

fDate :

Dec. 7-9, 2005

Firstpage :

242

Lastpage :

243

Keywords :

Annealing; Crystallization; Dielectrics; Electron traps; Fabrication; Hafnium compounds; Hafnium oxide; MOSFETs; Temperature; Tuning;

fLanguage :

English

Publisher :

ieee

Conference_Titel :

Semiconductor Device Research Symposium, 2005 International

Print_ISBN :

1-4244-0083-X

Type :

conf

DOI :

10.1109/ISDRS.2005.1596074

Filename :

1596074

Link To Document :