DocumentCode :
3284262
Title :
Characterization of Sb-Doped Fully-Silicided NiSi/SiO
2
/Si MOS Structure
Author :
Hosoi, T. ; Sano, K. ; Hino, M. ; Ohta, A. ; Makihara, K. ; Kaku, H. ; Miyazaki, S. ; Shibahara, K.
fYear :
2005
fDate :
Dec. 7-9, 2005
Firstpage :
244
Lastpage :
245
Keywords :
Diodes; Doping; Fabrication; Impurities; Ion implantation; Phase control; Production; Silicidation; Spectroscopy; Temperature;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Semiconductor Device Research Symposium, 2005 International
Print_ISBN :
1-4244-0083-X
Type :
conf
DOI :
10.1109/ISDRS.2005.1596075
Filename :
1596075
Link To Document :
https://search.ricest.ac.ir/dl/search/defaultta.aspx?DTC=49&DC=3284262
