Characterization of Sb-Doped Fully-Silicided NiSi/SiO₂/Si MOS Structure

Author

Hosoi, T. ; Sano, K. ; Hino, M. ; Ohta, A. ; Makihara, K. ; Kaku, H. ; Miyazaki, S. ; Shibahara, K.

fYear

2005

fDate

Dec. 7-9, 2005

Firstpage

244

Lastpage

245

Keywords

Diodes; Doping; Fabrication; Impurities; Ion implantation; Phase control; Production; Silicidation; Spectroscopy; Temperature;

fLanguage

English

Publisher

ieee

Conference_Titel

Semiconductor Device Research Symposium, 2005 International

Print_ISBN

1-4244-0083-X

Type

DOI

10.1109/ISDRS.2005.1596075

Filename

1596075

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