Analysis of Temperature Model on Device Characteristics for AlGaN/GaN MODFET for High Power Electronics

Author

Huq, Hasina F. ; Alam, Mohmmad T. ; Islam, Syed K.

Author_Institution

Dept. of Electr. & Comput. Eng., Tennessee Univ., Knoxville, TN

fYear

2005

fDate

7-9 Dec. 2005

Firstpage

250

Lastpage

251

Abstract

An investigation of the temperature model of a 1 mum gate AlGaN/GaN n-type modulation-doped field effect transistor (MODFET) is presented. The investigated temperature range is from 100 degK-600 degK. The critical parameters for dc characteristics are the maximum drain current (I_Dmax), the threshold voltage (V_th), and the peak dc transconductance (g_m). The small signal microwave parameters have been evaluated to determine the unity current gain cut-off frequency (f_T). High f_T (10-70 GHz) values and high current levels ( ~450 mA/mm) are achieved for a 1 mum AlGaN/GaN MODFET

Keywords

microwave field effect transistors; millimetre wave field effect transistors; power HEMT; semiconductor device models; 1 micron; 10 to 70 GHz; 100 to 600 K; AlGaN-GaN; MODFET; cut-off frequency; dc characteristics; drain current; high power electronics; modulation-doped field effect transistor; peak dc transconductance; temperature model; threshold voltage; Aluminum gallium nitride; Current-voltage characteristics; Cutoff frequency; Gallium nitride; HEMTs; MODFETs; Power electronics; Temperature distribution; Threshold voltage; Transconductance;

fLanguage

English

Publisher

ieee

Conference_Titel

Semiconductor Device Research Symposium, 2005 International

Conference_Location

Bethesda, MD

Print_ISBN

1-4244-0083-X

Type

conf

DOI

10.1109/ISDRS.2005.1596078

Filename

1596078