Title :
Analysis of Temperature Model on Device Characteristics for AlGaN/GaN MODFET for High Power Electronics
Author :
Huq, Hasina F. ; Alam, Mohmmad T. ; Islam, Syed K.
Author_Institution :
Dept. of Electr. & Comput. Eng., Tennessee Univ., Knoxville, TN
Abstract :
An investigation of the temperature model of a 1 mum gate AlGaN/GaN n-type modulation-doped field effect transistor (MODFET) is presented. The investigated temperature range is from 100 degK-600 degK. The critical parameters for dc characteristics are the maximum drain current (IDmax), the threshold voltage (Vth), and the peak dc transconductance (gm). The small signal microwave parameters have been evaluated to determine the unity current gain cut-off frequency (fT). High fT (10-70 GHz) values and high current levels ( ~450 mA/mm) are achieved for a 1 mum AlGaN/GaN MODFET
Keywords :
microwave field effect transistors; millimetre wave field effect transistors; power HEMT; semiconductor device models; 1 micron; 10 to 70 GHz; 100 to 600 K; AlGaN-GaN; MODFET; cut-off frequency; dc characteristics; drain current; high power electronics; modulation-doped field effect transistor; peak dc transconductance; temperature model; threshold voltage; Aluminum gallium nitride; Current-voltage characteristics; Cutoff frequency; Gallium nitride; HEMTs; MODFETs; Power electronics; Temperature distribution; Threshold voltage; Transconductance;
Conference_Titel :
Semiconductor Device Research Symposium, 2005 International
Conference_Location :
Bethesda, MD
Print_ISBN :
1-4244-0083-X
DOI :
10.1109/ISDRS.2005.1596078
