Title :
AlGaN/GaN HEMTs: Experiment and Simulation of DC Characteristics
Author :
Faraclas, Elias W. ; Webster, Richard T. ; Anwar, A.F.M.
Author_Institution :
Dept. of Electr. & Comput. Eng., Connecticut Univ., Storrs, CT
Abstract :
This paper presents simulated DC characteristics of an AlGaN/GaN HEMT along with corroborating experimental measurements for validation. GaN-based HFETs are vigorously pursued for possible applications in high power presented in I. Daumiller et al. (1998), high temperature presented in Y.-F. Wu et al. (2004), and high frequency devices and circuits. Theoretical experimentation is required for device optimization to realize higher power and operation at frequencies through W-band
Keywords :
III-V semiconductors; aluminium compounds; gallium compounds; power HEMT; wide band gap semiconductors; AlGaN-GaN; HEMT; W-band operation; device optimization; high electron mobility transistor; high frequency circuits; high frequency devices; Aluminum gallium nitride; Circuit simulation; Computational modeling; Force measurement; Frequency; Gallium nitride; HEMTs; MODFETs; Numerical simulation; Silicon carbide;
Conference_Titel :
Semiconductor Device Research Symposium, 2005 International
Conference_Location :
Bethesda, MD
Print_ISBN :
1-4244-0083-X
DOI :
10.1109/ISDRS.2005.1596079
