DocumentCode
3284332
Title
Characterization of Post-Gate Annealing Impact on Traps in AlGaN/GaN Schottky Diodes by Capacitance and Conductance Dispersion
Author
Song, Junghui ; Kim, Hyeongnam ; Lu, Wu
fYear
2005
fDate
Dec. 7-9, 2005
Firstpage
254
Lastpage
255
Keywords
Aluminum gallium nitride; Annealing; Capacitance; Capacitance-voltage characteristics; Electronics packaging; Frequency; Gallium nitride; HEMTs; MODFETs; Schottky diodes;
fLanguage
English
Publisher
ieee
Conference_Titel
Semiconductor Device Research Symposium, 2005 International
Print_ISBN
1-4244-0083-X
Type
conf
DOI
10.1109/ISDRS.2005.1596080
Filename
1596080
Link To Document