DocumentCode :
3284332
Title :
Characterization of Post-Gate Annealing Impact on Traps in AlGaN/GaN Schottky Diodes by Capacitance and Conductance Dispersion
Author :
Song, Junghui ; Kim, Hyeongnam ; Lu, Wu
fYear :
2005
fDate :
Dec. 7-9, 2005
Firstpage :
254
Lastpage :
255
Keywords :
Aluminum gallium nitride; Annealing; Capacitance; Capacitance-voltage characteristics; Electronics packaging; Frequency; Gallium nitride; HEMTs; MODFETs; Schottky diodes;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Semiconductor Device Research Symposium, 2005 International
Print_ISBN :
1-4244-0083-X
Type :
conf
DOI :
10.1109/ISDRS.2005.1596080
Filename :
1596080
Link To Document :
https://search.ricest.ac.ir/dl/search/defaultta.aspx?DTC=49&DC=3284332
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