Ultrahigh-speed all-optical demultiplexing based on low-temperature-grown MQWs

Author

Takahashi, Ryo ; Kawamura, Yuichi ; Iwamura, Hidetoshi ; Matsuoka, Yutaka

Author_Institution

NTT Opto-Electron. Labs., Kanagawa, Japan

Volume

4

fYear

1996

fDate

19-19 Sept. 1996

Firstpage

11

Abstract

Ultrahigh-speed all-optical demultiplexing corresponding to a 680-Gbit/s signal pulse is demonstrated based on an ultrafast surface-reflection all-optical switch (called LOTOS) made with low-temperature-grown strained Be-doped InGaAs/InAlAs multiple quantum wells. LOTOS is basically a saturable absorber that relies on a carrier-induced change in excitonic absorption in InGaAs/InAlAs MQWs. The ultrafast all-optical switch is also utilized as an all-optical sampler to measure the demultiplexed signals.

Keywords

III-V semiconductors; aluminium compounds; beryllium; chemical beam epitaxial growth; demultiplexing equipment; gallium arsenide; high-speed optical techniques; indium compounds; optical saturable absorption; optical switches; semiconductor doping; semiconductor growth; semiconductor quantum wells; signal sampling; 680 Gbit/s; InGaAs:Be-InAlAs; LOTOS; all-optical sampler; carrier-induced change; demultiplexed signals; excitonic absorption; gas source MBE; low-temperature-grown MQW; low-temperature-grown strained Be-doped InGaAs/InAlAs multiple quantum wells; saturable absorber; signal pulse; ultrafast surface-reflection all-optical switch; ultrahigh-speed all-optical demultiplexing;

fLanguage

English

Publisher

ieee

Conference_Titel

Optical Communication, 1996. ECOC '96. 22nd European Conference on

Conference_Location

Oslo, Norway

Print_ISBN

82-423-0418-1

Type

conf

Filename

715456