Title : 
Characterization of sidewall roughness inside porous anodic alumina template holes by scanning electron microscopy
         
        
            Author : 
Han, Guoqiang ; Chen, Shu ; Zhang, Dong
         
        
            Author_Institution : 
Sch. of Mech. Eng. & Autom., Fuzhou Univ., Fuzhou, China
         
        
        
        
        
        
            Abstract : 
Resist line edge roughness (LER) and sidewall roughness of micro/nano structures are becoming important issues of increasing concern in the sub-100 nm fabrication regime due to their critical impact on device performance. LER and sidewall roughness metrology is used to monitor individual nanostructure fabrication. Porous anodic alumina (PAA) membranes are typical nanoscale templates and can be fabricated with different pore sizes through second oxide technique by changing the acid electrolyte and the anodization voltage. The LER of sidewall inside anodic porous alumina template holes has been evaluated by analyzing top-down scanning electron microscopy (SEM) images off-line. And RMS roughness (3σ) and height-height correlation function are used to characterize the sidewall roughness inside nanoscale holes of porous alumina template.
         
        
            Keywords : 
alumina; nanoporous materials; nanotechnology; resists; scanning electron microscopy; Al2O3; RMS roughness; SEM; device performance; nanostructure fabrication; porous anodic alumina template holes; resist line edge roughness; scanning electron microscopy; sidewall roughness; Arrays; Correlation; Educational institutions; Nanoscale devices; Scanning electron microscopy; Semiconductor device measurement; Image Analysis; Porous Anodic Alumina (PAA); Scanning Electron Microscopy (SEM); Sidewall Roughness;
         
        
        
        
            Conference_Titel : 
Nano/Micro Engineered and Molecular Systems (NEMS), 2011 IEEE International Conference on
         
        
            Conference_Location : 
Kaohsiung
         
        
            Print_ISBN : 
978-1-61284-775-7
         
        
        
            DOI : 
10.1109/NEMS.2011.6017538