DocumentCode :
3284518
Title :
Characterization of sidewall roughness inside porous anodic alumina template holes by scanning electron microscopy
Author :
Han, Guoqiang ; Chen, Shu ; Zhang, Dong
Author_Institution :
Sch. of Mech. Eng. & Autom., Fuzhou Univ., Fuzhou, China
fYear :
2011
fDate :
20-23 Feb. 2011
Firstpage :
1056
Lastpage :
1059
Abstract :
Resist line edge roughness (LER) and sidewall roughness of micro/nano structures are becoming important issues of increasing concern in the sub-100 nm fabrication regime due to their critical impact on device performance. LER and sidewall roughness metrology is used to monitor individual nanostructure fabrication. Porous anodic alumina (PAA) membranes are typical nanoscale templates and can be fabricated with different pore sizes through second oxide technique by changing the acid electrolyte and the anodization voltage. The LER of sidewall inside anodic porous alumina template holes has been evaluated by analyzing top-down scanning electron microscopy (SEM) images off-line. And RMS roughness (3σ) and height-height correlation function are used to characterize the sidewall roughness inside nanoscale holes of porous alumina template.
Keywords :
alumina; nanoporous materials; nanotechnology; resists; scanning electron microscopy; Al2O3; RMS roughness; SEM; device performance; nanostructure fabrication; porous anodic alumina template holes; resist line edge roughness; scanning electron microscopy; sidewall roughness; Arrays; Correlation; Educational institutions; Nanoscale devices; Scanning electron microscopy; Semiconductor device measurement; Image Analysis; Porous Anodic Alumina (PAA); Scanning Electron Microscopy (SEM); Sidewall Roughness;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Nano/Micro Engineered and Molecular Systems (NEMS), 2011 IEEE International Conference on
Conference_Location :
Kaohsiung
Print_ISBN :
978-1-61284-775-7
Type :
conf
DOI :
10.1109/NEMS.2011.6017538
Filename :
6017538
Link To Document :
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