Title :
Photonic band gap structures and their application for measuring parameters of semiconductor layers
Author :
Usanov, D.A. ; Nikitov, S.A. ; Skripal, A.V. ; Ponomarev, D.V. ; Latysheva, E.V.
Author_Institution :
Dept. Solid State Phys., Saratov State Univ. named after N.G., Saratov, Russia
Abstract :
The possibility to simultaneously determine the thickness and the conductivity of thin semiconductor layer and the mobility of its free charge carriers by use of microwave photonic crystal with small number of its constituent elements has been shown. The results of the determination of semiconductor epitaxial layer parameters by the inverse problem solving using reflection and transmission spectra in microwave band are presented.
Keywords :
carrier mobility; electrical conductivity; inverse problems; microwave spectra; photonic band gap; photonic crystals; reflectivity; semiconductor epitaxial layers; conductivity; constituent elements; free charge carrier mobility; inverse problem; microwave band; microwave photonic crystal; photonic band gap structures; reflection spectra; semiconductor epitaxial layer parameters; thin semiconductor layer; transmission spectra; Crystals; Dielectrics; Epitaxial growth; Gallium; Indexes; Photonics; Single photon emission computed tomography; Microwave photonic crystals; conductivity; inverse problem; mobility; semiconductor layers; thickness; waveguides;
Conference_Titel :
Microwave Symposium (IMS), 2015 IEEE MTT-S International
Conference_Location :
Phoenix, AZ
DOI :
10.1109/MWSYM.2015.7166794
