DocumentCode :
3284547
Title :
High Breakdown Voltage AlGaN/GaN MIS-HEMT with SiN and TiO
2
Gate Insulator
Author :
Yagi, Shuich ; Shimizu, Mitsuaki ; Inada, Masaki ; Yamamoto, Yuki ; Piao, Guanxi ; Yano, Yoshiki ; Okumura, Hajime
fYear :
2005
fDate :
Dec. 7-9, 2005
Firstpage :
280
Lastpage :
281
Keywords :
Aluminum gallium nitride; Dielectrics and electrical insulation; Electron beams; FETs; Gallium nitride; HEMTs; MODFETs; Metal-insulator structures; Silicon compounds; Voltage;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Semiconductor Device Research Symposium, 2005 International
Print_ISBN :
1-4244-0083-X
Type :
conf
DOI :
10.1109/ISDRS.2005.1596094
Filename :
1596094
Link To Document :
https://search.ricest.ac.ir/dl/search/defaultta.aspx?DTC=49&DC=3284547
