DocumentCode :
3284557
Title :
Structural characteristics of hydride vapor phase epitaxially grown GaN
Author :
Mahadik, Nadeemullah ; Qadri, S.B. ; Rao, Mulpuri V. ; Yesinowski, James P.
fYear :
2005
fDate :
Dec. 7-9, 2005
Firstpage :
282
Lastpage :
283
Keywords :
Anodes; Gallium nitride; Grain boundaries; Indium phosphide; Lattices; Magnetic films; Nuclear magnetic resonance; Optical films; Optical reflection; X-ray diffraction;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Semiconductor Device Research Symposium, 2005 International
Print_ISBN :
1-4244-0083-X
Type :
conf
DOI :
10.1109/ISDRS.2005.1596095
Filename :
1596095
Link To Document :
https://search.ricest.ac.ir/dl/search/defaultta.aspx?DTC=49&DC=3284557
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