Title :
Large-Signal Modeling of SiC-Based RF MESFET
Author :
Mukherjee, Sankha S. ; Islam, Syed S.
Keywords :
Capacitance; Conducting materials; Dielectric materials; Gain; MESFETs; Power generation; Radio frequency; Silicon carbide; Thermal conductivity; Voltage;
Conference_Titel :
Semiconductor Device Research Symposium, 2005 International
Print_ISBN :
1-4244-0083-X
DOI :
10.1109/ISDRS.2005.1596097
