Title :
The Reverse Leakage Current of Present-Day Manufactured Silicon PN Junctions and Their Maximum Permissible Operation Temperature
Author :
Obreja, Vasile V N
Keywords :
Diodes; Displays; Leakage current; Manufacturing; Passivation; Research and development; Shape; Silicon; Temperature; Voltage;
Conference_Titel :
Semiconductor Device Research Symposium, 2005 International
Print_ISBN :
1-4244-0083-X
DOI :
10.1109/ISDRS.2005.1596098
