Title :
A bandgap voltage reference circuit design in 0.18um CMOS process
Author :
Cai, Yanyan ; Yue, Liqin
Author_Institution :
Inf. Eng. Coll., Huanghe Sci. & Technol. Coll., Zhengzhou, China
Abstract :
This paper presents a design and analysis method of a bandgap reference circuit. The Bandgap design is realized through the 0.18um CMOS process. Simulation results show that the bandgap circuit outputs 1.203V in the typical operation condition. The variance rate of output voltage is 0.026mV/°C with the operating temperature varying from -40°C to 125°C. And it is 3.89mV/V with the power supply changes from 1.62V to 1.98V The layout area is 0.245mm*0.133mm.
Keywords :
CMOS integrated circuits; network synthesis; reference circuits; CMOS process; bandgap design; bandgap voltage reference circuit design; size 0.18 mum; temperature -40 degC to 125 degC; voltage 1.62 V to 1.98 V; CMOS integrated circuits; CMOS process; Circuit synthesis; Design methodology; Educational institutions; Indium phosphide; Photonic band gap; Bandgap Voltage Reference; CMOS; PTAT; Spectre;
Conference_Titel :
Electric Information and Control Engineering (ICEICE), 2011 International Conference on
Conference_Location :
Wuhan
Print_ISBN :
978-1-4244-8036-4
DOI :
10.1109/ICEICE.2011.5777828
