DocumentCode
3284669
Title
Resonance frequency behavior of silicon nitride cantilevers as a function of pressure in different gas environments
Author
Gavan, Khashayar Babaei ; Van der Heijden, Joost ; Van der Drift, Emile ; Van der Zant, Herre
Author_Institution
Kavli Inst. of Nanosci., Delft Univ. of Technol., Delft, Netherlands
fYear
2009
fDate
25-28 Oct. 2009
Firstpage
1836
Lastpage
1839
Abstract
We present experimental data on resonant behavior of the first flexural mode of a silicon nitride cantilever in noble gas ambients of He, Ar, and Xe. To this aim thermal noise spectra have been measured with an optical setup. Overall resonance frequency and the quality factor of the first flexural mode vs. pressure are in good agreement with the existing theories for the molecular and viscous pressure regimes. Prior to the viscous regime we observe a small anomalous increase in the resonance frequency which is most pronounced in the He environment. The increase points to a slight stiffening of the cantilever. Surprisingly temperature increase from laser irradiation shows a further increase in the stiffening. Diffusion of gas in the near-surface region of the amorphous cantilever material may lead to stiffening and so account for the small frequency increase.
Keywords
Q-factor; argon; cantilevers; diffusion; helium; laser beam effects; nanoelectromechanical devices; noncrystalline structure; silicon compounds; xenon; Ar; He; SiN; Xe; amorphous cantilever material; different gas environments; gas diffusion; laser irradiation; noble gas ambients; pressure function; quality factor; resonance frequency; silicon nitride cantilevers; viscous pressure regimes; Argon; Helium; Noise measurement; Optical noise; Q factor; Resonance; Resonant frequency; Silicon; Temperature; Working environment noise;
fLanguage
English
Publisher
ieee
Conference_Titel
Sensors, 2009 IEEE
Conference_Location
Christchurch
ISSN
1930-0395
Print_ISBN
978-1-4244-4548-6
Electronic_ISBN
1930-0395
Type
conf
DOI
10.1109/ICSENS.2009.5398423
Filename
5398423
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