DocumentCode :
3284680
Title :
The Effects of Implanting Al and Al and C at Different Temperatures in Different Concentrations into SiC
Author :
Stepp, D. ; Jones, K.A. ; Zheleva, T.S. ; Derenge, M.A. ; Vispute, R.D. ; Hullavarad, S. ; Dar, S.
fYear :
2005
fDate :
Dec. 7-9, 2005
Firstpage :
298
Lastpage :
299
Keywords :
Annealing; Conductivity; Electric variables measurement; Implants; Ionization; Physics; Sheet materials; Silicon carbide; Stacking; Temperature distribution;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Semiconductor Device Research Symposium, 2005 International
Print_ISBN :
1-4244-0083-X
Type :
conf
DOI :
10.1109/ISDRS.2005.1596103
Filename :
1596103
Link To Document :
https://search.ricest.ac.ir/dl/search/defaultta.aspx?DTC=49&DC=3284680
