DocumentCode :
3284684
Title :
Modeling envelope-tracking RF amplifiers
Author :
Soury, Arnaud
Author_Institution :
EEsof Div., Keysight Technol., France
fYear :
2015
fDate :
17-22 May 2015
Firstpage :
1
Lastpage :
4
Abstract :
In the past years, the design of modern RF transceivers has been widely driven by strict and contrasting design specifications (linearity, efficiency, etc.). This is especially true for the advent of the new 4G (LTE) and of the next 5G standards. In this context, power amplifiers (PAs) have received a particular attention and we have seen the promotion of various pre-distortion techniques (DPD). In parallel, envelope tracking techniques recently allowed significant improvements in terms of power consumption. While some methods capturing the preformatting of the DC bias voltage have been proposed, the majority are based on static observations. Unfortunately, the design on new IC processes, either small-scale CMOS or GaN, is very sensitive to nonlinear memory effects. Those effects may alter the quality of the correction. This paper proposes a way to characterize those effects.
Keywords :
CMOS integrated circuits; III-V semiconductors; gallium compounds; radiofrequency power amplifiers; DC bias voltage; GaN; IC process; envelope tracking technique; envelope-tracking RF amplifiers; nonlinear memory effects; power amplifiers; power consumption; predistortion techniques; small-scale CMOS; Artificial intelligence; Artificial neural networks; Land mobile radio; Mathematical model; Radio frequency; Solid modeling; Transceivers; Envelope Tracking PAs; Long-Term Memory;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Microwave Symposium (IMS), 2015 IEEE MTT-S International
Conference_Location :
Phoenix, AZ
Type :
conf
DOI :
10.1109/MWSYM.2015.7166802
Filename :
7166802
Link To Document :
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